| PART |
Description |
Maker |
| 2SC3792 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| 2SC4705 |
Low-Frequency General-Purpose Amp/ Applications(High hFE)
Low-Frequency General-Purpose Amp, Applications(High hFE)
|
Sanyo Semicon Device
|
| 2SC3689 |
High-hFE, Low-Frequency, General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| 2SC3070 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC36511 2SC3651 |
High hFE, Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| 2SA1434 0071 |
PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications
From old datasheet system
|
Sanyo
|
| 2SC2712 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700
|
TY Semiconductor Co., Ltd
|
| GM9015 |
Excellent HFE Linearity HFE : hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| GM9012 |
Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
