| PART |
Description |
Maker |
| NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 223
P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管（漏电2.5A, 漏源电压-60V，导通电.3Ω
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFL014 IRFL014TR |
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)
|
International Rectifier
|
| IRFL9014TR |
-60V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| ZXMS6002GTA ZXMS6002G |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
1.6 A, 60 V, 0.675 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA SOT-223, 4 PIN
|
Diodes, Inc.
Diodes Incorporated
Diodes Inc.
|
| FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package
N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m
N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| X2201AD |
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; Similar to IRFL1006 with Lead Free Packaging NVRAM中（EEPROM的基础
|
Honeywell International, Inc.
|
| FDI025N06 |
60V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ
N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
|
Fairchild Semiconductor
|
| 2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|的SOT - 186
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| CR2480M |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 28A I(D) | SOT-262VAR 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 28A条（丁）|的SOT - 262VAR
|
InterFET, Corp.
|
| CHT918 CHT2907A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | SOT-23 晶体管|晶体管|进步党| 60V的五（巴西）总裁| SOT - 23封装
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | SOT-23 晶体管|晶体管|叩| 15V的五（巴西）总裁| SOT - 23封装
|
Unisonic Technologies Co., Ltd.
|
| BSP75G BSP75G2 |
Ultra Low Capacitance Transient Voltage Suppressor Diodes
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET?/a> MOSFET
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET⑩ MOSFET
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET??MOSFET
IntelliFET™ 60V self protected MOSFET
|
List of Unclassifed Manufacturers
ETC
N.A.
Zetex Semiconductors
|
| IRFI064 IRFI064-15 |
Simple Drive Requirements
TRANSISTOR N-CHANNEL(Vdss=60V/ Rds(on)=0.017ohm/ Id=45A*)
TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
60V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|
