| PART |
Description |
Maker |
| MTB75N03HDL MTB75N03HDL_D ON2451 |
TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS
From old datasheet system
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| MTB50P03HDL MTB50P03HDL_D ON2435 ON2434 |
TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS
From old datasheet system
|
MOTOROLA[Motorola Inc]
ON Semi
MOTOROLA[Motorola, Inc]
|
| BS108 ON0217 |
200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTD20P06HDL_D MTD20P06HDL MTD20P06 ON2490 |
TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
From old datasheet system
|
ON Semi
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| PMV60EN PMV60EN-01 |
uTrenchMOS tm enhanced logic level FET
N-channel TrenchMOS logic level FET
3M SCOTCHCAST ELECTRICAL RESIN 5 (16 1-LB UNITS = CARTON) RoHS Compliant: Yes
UTrenchMOS enhanced logic level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHU78NQ03LT PHP78NQ03LT |
N-channel TrenchMOS logic level FET
N-channel TrenchMOSTM logic level FET 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
|
ON Semiconductor
Motorola, Inc
|
| MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor
Motorola, Inc
|
