| PART |
Description |
Maker |
| PTB20101 |
175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
| PTFA043002E |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 鈥?860 MHz
|
Infineon Technologies AG
|
| MRF374D |
MRF374 470-860 MHz, 100 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
|
Motorola
|
| PTVA043502FC |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ?860 MHz
|
Infineon Technologies A...
|
| M68732SHA 68732SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-520 MHz 6.7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 470-520MHz, 6.7W, FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 470-520MHZ 6.7W FM PORTABLE
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57729UH 57729UH |
470-490MHz 12.5V /30W /FM MOBILE RADIO
470-490MHz 12.5V,30W,FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| BGD804 BGD804112 |
860 MHz, 20 dB gain power
|
NXP Semiconductors N.V.
Philips
|
| UPC2799 |
SIMMIC 50-860 MHz FREQUENCY UPCONVERTER
|
NEC
|
| BGD906MI BGD906 |
860 MHz, 21.5 dB gain power doubler amplifier
|
Philips
|
| CGD91401 9397-750-08861 CGD914MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
| BGD814 BGD81401 |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| BGD904MI BGD904 |
860 MHz, 20 dB gain power doubler amplifier
|
Philips
|
