| PART |
Description |
Maker |
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MRF19060 MRF19060R3 MRF19060SR3 |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MRF18090B MRF18090BS |
MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
Freescale Semiconductor, Inc
Motorola, Inc
|
| MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3 |
RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Motorola Mobility Holdings, Inc.
|
| MRF5S9070NR1 |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| MRF281ZR1 MRF281 MRF281SR1 |
MRF281SR1, MRF281ZR1 2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRF5S19150R3 MRF5S19150 MRF5S19150SR3 |
MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| APTGT50A170T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT20A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
