| PART |
Description |
Maker |
| MRF1517 |
MRF1517T1 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
From old datasheet system
|
Motorola
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
| MRF21180R6 MRF21180 |
2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Motorola Mobility Holdings, Inc.
|
| MRF19090 MRF19090S MRF19090SR3 |
MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc
|
| MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
Motorola Inc
|
| APTGT50A170T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT20A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
