| PART |
Description |
Maker |
| M29W512B M29W512B120K1T M29W512B120NZ1T M29W512B55 |
512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory 512千位64Kb的8，大量低电压单电源闪
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| M28F512-12B1 M28F512-12C1 M28F512-10C1 28F256 M28F |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory 512千位4Kb的x8整体擦除）Flasxh内存
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM
512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM
CAP 3300UF 50V ELECT SMG RAD
512 Kbit Serial I? Bus EEPROM
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I裁 Bus EEPROM
512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 27C512-120 M27C512-12B M27C512-12B1TR M27C512-12B1 |
512 Kbit (64Kb x8) UV EPROM and OTP EPROM
512 Kbit 64Kb x8 UV EPROM and OTP EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位（512 KB的16）SmartVoltage闪存
RES CURRENT SENSE .025 OHM 1W 1% 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
http://
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Compo...
|
| M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
| SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| UL1201 |
Wzmacniacz p.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| CY14C512PA13 |
512-Kbit (64 K x 8) SPI nvSRAM
|
Cypress Semiconductor
|
| 28F256 M28F256-90C1TR M28F256-90C3TR M28F256-90C6T |
Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC 0 to 70 256K2K的8，芯片擦除）闪存
Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP 0 to 70 256K32K的8，芯片擦除）闪存
256K(32K x8, Chip Erase)FLASH MEMORY 256K2K的8，芯片擦除）闪存
KAPTON STRAP F/GLASS TUBE PKG/5
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC 0 to 70
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SO 0 to 70
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP 0 to 70
256K(32K x8 / Chip Erase)FLASH MEMORY
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY14B512Q2-LHXI CY14B512Q3 CY14B512Q1 |
512-Kbit (64 K ? 8) Serial (SPI) nvSRAM
512-Kbit (64 K × 8) Serial (SPI) nvSRAM
|
Cypress Semiconductor
|
| FM25V05-G |
512-Kbit (64 K 8) Serial (SPI) F-RAM
|
Cypress
|
