| PART |
Description |
Maker |
| IRFP250 IRFP250B IRFP250BFP001 |
200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF610B IRF610BFP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW640BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW640A
|
Fairchild Semiconductor
|
| SFR9210 SFU9210 SFR9210F SFU9210TUAM002 |
200V P-Channel A-FET
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SFW9620TM |
200V P-Channel A-FET
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRF630BTSTUFP001 |
200V N-Channel B-FET / Substitute of IRF630 & IRF630A; ; No of Pins: 3; Container: Rail 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m
N-Channel MOSFET 200V, 18A, 0.14楼?
N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
| FQB34N20L FQI34N20L FQB34N20LTMSB82076 FQB34N20LTM |
200V LOGIC N-Channel MOSFET 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
