| PART |
Description |
Maker |
| 2SC4667 E000971 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING COMPUTER COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC466703 2SC4667 |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications
|
Toshiba Semiconductor
|
| 2SC3437 |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications
|
TOSHIBA
|
| KDS160 |
SILICON EPITAXIAL PLANAR TYPE DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC(Korea Electronics)
|
| HN1D01F07 HN1D01F |
Silicon Epitaxial Planar Type Ultra-High-Speed Switching Applications
|
Toshiba Semiconductor
|
| UPA835 UPA835TC UPA835TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC Corp.
NEC[NEC]
|
| 2SC2636 |
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation) VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
http://
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Panasonic, Corp.
|
| 1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
|
TOSHIBA
|
| 1SS360 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| HN1D02F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
