PART |
Description |
Maker |
PN10-8FF-L PN10-10FF-D |
12-10 BARREL NYLON INSUL FLANGED FORK 225 5.72 MAX WIRE INSUL DIA COPPER ALLOY, TIN FINISH, FORK TERMINAL
|
PANDUIT CORP.
|
NCP1050ST100 NCP1050ST44 NCP1052P136 NCP1050/D NCP |
Monolithic High Voltage Gated Oscillator Power Switching Regulator 2 A SWITCHING REGULATOR, 50 kHz SWITCHING FREQ-MAX, PDSO4 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效,5安培开关稳压器 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 2 A SWITCHING REGULATOR, 154 kHz SWITCHING FREQ-MAX, PDIP8 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 24字符X2行,5X7点矩阵字符和光标
|
ON Semiconductor
|
FS50UMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
|
HAT1038R HAT1038RJ HAT1038RD |
Power switching MOSFET Silicon P Channel Power MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
19007-0032 19005-0001 19005-0015 19007-0029 19007- |
.187X.020 FIQD FLAG EXP. TAPED (BB-2224X 2 mm2, PUSH-ON TERMINAL Female Disconnect Solderless Terminal; Wire Size (AWG):18-22; Tab Width:0.250"; Insulator Color:Pink; Terminal Insulation:Nylon; Gender:Female 0.8 mm2, PUSH-ON TERMINAL .250X.032 FEM.FIQD COUPLER TP (C-2265T) 5 mm2, PUSH-ON TERMINAL CONN .187 FLAG INSUL 14-16AWG 2 mm2, PUSH-ON TERMINAL .250X.032 FIQD FLAG STRIP(AA-2220Z) RoHS Compliant: Yes 0.8 mm2, PUSH-ON TERMINAL CONN .250 FLAG INSUL 18-22AWG 0.8 mm2, PUSH-ON TERMINAL .187X.020 FIQD FLAG (AA-2222) 0.8 mm2, PUSH-ON TERMINAL .187X.032 FIQD FLAG (BB-2225) 2 mm2, PUSH-ON TERMINAL CONN .250 MALE INSUL 14-16AWG 2 mm2, TAB TERMINAL 190070020
|
Molex, Inc. MOLEX INC
|
HAT1047R HAT1047RJ |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SK2885L 2SK2885S 2SK2885 |
Power switching MOSFET Silicon N Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http:// Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MP4202 E002501 |
HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
387216702 |
9.53 [.375] SR BTS ASY, INSUL. FT, W/MTG
|
Molex Electronics Ltd.
|
FS70UMJ-2 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 100 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
|