| PART |
Description |
Maker |
| 2SD2162 2SD2162-AZ |
8 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC
|
| 2N526 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SD1843 2SD1843-T |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN硅外延晶体管（达林顿接线）低频功率放大器和低速开
Low-freq. power amp., low-speed switching power tr.
|
NEC, Corp.
NEC[NEC]
|
| 2SD965 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
Panasonic Semiconductor
|
| 2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| KSC2710 |
NPN (LOW FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| 310-025107-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| 2SD525 |
LOW FREQUENCY POWER AMPLIFIER(NPN EPITAXIAL)
|
WINGS[Wing Shing Computer Components]
|
