| PART |
Description |
Maker |
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
TRIMMER, 15 TURN 20K
CONN HEADER 12POS DL PCB 30GOLD
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MX29SL800CTXHC-90 MX29SL800CTXHC-90G MX29SL800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电压仅1.8V的闪
|
Macronix International Co., Ltd.
PROM
|
| AM29LV160DB-120EC AM29LV160DB-120EE AM29LV160DB-12 |
From old datasheet system
x8/x16 Flash EEPROM
16 Mbit (2 M x 8-Bit/1 M x 16-Bit)
x8/x16FlashEEPROM
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| MX29LV800CTXHC-90 MX29LV800CTXHC-90G MX29LV800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PBGA48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO44
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电V时仅闪存
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO44
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PBGA48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MB84VD23280EA MB84VD23280EA-90 MB84VD23280EA-90-PB |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM 64M号（x8/x16）闪
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
| MB84VD2229XEE MB84VD2229XEA MB84VD2228XEA |
(MB84VD2228xEA/EE / MB84VD2229xEA/EE) 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM
|
Fujitsu Media Devices
|
| M58LW064 M58LW064BZA M58LW064A M58LW064A150NF1T M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| MB84VD22181FM-70 MB84VD22181FM-70PBS MB84VD22191FM |
32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM
|
SPANSION[SPANSION]
|
| NN51V4265AJ-40 NN51V4265AJ-45 NN51V4265ALTT-45 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| HY514264BLJC-60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
