PART |
Description |
Maker |
GM72V66841CLT GM72V66841CT GM72V66841CT_CLT GM72V6 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM 2097152 word x 8 bit x 4 bank synchronous dynamic RAM
|
etc LG Semicon Co.,Ltd. LG Semiconductor
|
MSM27C3202CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit One Time PROM 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM 2097152字16位或4194304字8位一次性可编程
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
M5M5V216ATP M5M5V216ART D98013_A M5M5V216ATP-55LW |
2097152-bit CMOS static RAM From old datasheet system 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system 4-BANK x 2097152-WORD x 8-BIT 64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK)(4分字× 32位同步动态内存模块) 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
HM514100DLS-6 HM514100DLS-7 HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 60ns 4,194,304-word x 1-bit dynamic RAM, 70ns 4,194,304-word x 1-bit dynamic RAM, 80ns
|
Hitachi Semiconductor
|
5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3) From old datasheet system
|
hitachi
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM 262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar LG[LG Semicon Co.,Ltd.]
|