| PART |
Description |
Maker |
| K4S640432F-TL75 K4S640432F K4S640432F-TC1H K4S6404 |
4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM44S32030T-G_F10 KM44S32030T-G_FH KM44S32030T-G_F |
8M x 4Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4S280432D-TC_L1L K4S280432D-TC_L1H K4S280432D-TC_ |
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
Samsung semiconductor
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280432M-TC_L80 K4S280432M K4S280432M-TC_L10 K4S |
MC 7P MR 16/1 PVC GOLD RoHS Compliant: Yes
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
| K4F160411C-B K4F170411C K4F170411C-B K4F170411C-F |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic
Samsung semiconductor
|
| SD4001 |
4BIT MICRO CONTROLLER
|
AUK corp
|
| HY51VS17403HG HV51V7403HGL-5 HV51V7403HGL-6 HV51V7 |
4M x 4Bit EDO DRAM 4米4位EDO公司的DRAM
|
http://
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| IN5732 INTEGRALJOINTSTOCKCOMPANY-IN5732 |
4BIT SINGLE CHIP MICROCOMPUTER
|
Integral Corp.
|
