| PART |
Description |
Maker |
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
|
List of Unclassifed Manufacturers
|
| MJE702 MJE700 MJE701 MJE703 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP140T TIP141T TIP142T |
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE- EMITTER SHUNT RESISTORS
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP142F TIP141F TIP140F |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
Power Innovations Limited
FAIRCHILD[Fairchild Semiconductor]
|
| BC847BLD-7 BC847BLD1 |
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE
|
Diodes Incorporated
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BUT33-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
