| PART |
Description |
Maker |
| 240001ABAA 240632AAAE 240732AAAE 240004ABAA 240004 |
Elapsed Time Meters
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List of Unclassifed Manufacturers
List of Unclassifed Man...
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| DS1602 |
Elapsed Time Counter
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products
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| STK17TA8 STK17TA8-R STK17TA8-R25 STK17TA8-R25I STK |
nvTime Event Data Recorder 128K x 8 AutoStore nvSRAM with Real-Time Clock Product Preview
nvTime⑩ Event Data Recorder 128K x 8 AutoStore⑩ nvSRAM with Real-Time Clock Product Preview
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SIMTEK
ETC[ETC]
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| 5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)).
UT9Q512K32 16Megabit SRAM MCM
UT9Q512K32 16Megabit SRAM MCM
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
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AEROFLEX[Aeroflex Circuit Technology]
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| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
| 5962H3829435BNC 5962H3829435BNX 5962H3829435BXA 59 |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish solder.
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Aeroflex Circuit Technology
|
| 1SS300 |
Small package Small total capacitance :CT = 2.2 pF(Typ)Fast reverse recovery time :trr=1.6 ns(Typ)
|
TY Semiconductor Co., Ltd
|
| M5297P M5297E |
AC-DC TOTAL SYSTEM RESER IC
From old datasheet system
AC-DC TOTAL SYSTEM RESET IC
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AM29C833PC AM29C833A/B3A AM29C853A/B3A AM29C853/B3 |
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 300kRads
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH9250 with optional Total Dose Rating of 300kRads
60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package; A IRHLF7970Z4 with Standard Packaging
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 300kRads
150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package also available with Total Dose Rating of 300kRads; A IRHYS67134CM with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57130 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package; Similar to IRHMJ7250 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 1000kRads
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package; Similar to IRHYS597Z30CM with optional Total Dose Rating of 300kRads 位总线收发
60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB7970Z4 with Standard Packaging 位总线收发
Single 8-bit Bus Transceiver 位总线收发
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM9130 with Standard Packaging 位总线收发
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Vectron International, Inc.
Advanced Micro Devices, Inc.
EPCOS AG
3M Company
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
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AMIC Technology
|
