PART |
Description |
Maker |
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NES1823P-45 |
45 W L / S-BAND PUSH-PULL POWER GaAs MES FET 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais) Panasonic Semiconductor
|
3SK166 3SK166A 3SK166A-0 3SK166A-2 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET 砷化镓N沟道双栅场效应晶体管
|
Sony Corporation Sony, Corp.
|
SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
SGM2014AN SGM2014 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
SGM2016AM SGM2016AP SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor Toshiba Corporation
|