| PART |
Description |
Maker |
| M48T513V M48T513V-70CS1 M48T513V-70PM1 M48T513V-85 |
3.3V-5V 4 Mbit (512Kb x8) TIMEKEEPER [ SRAM
3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M48Z512AY M48Z512A |
4 Mbit (512Kb x8) ZEROPOWER ? SRAM
|
STMicro
|
| M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W004BT M29W004BT55N6T |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，启动块低压单电源闪
|
ST Microelectronics
STMicroelectronics N.V.
|
| M50LPW040N5T M50LPW040 M50LPW040K M50LPW040K1T M50 |
From old datasheet system
4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory
4 MBIT (512KB X8, UNIFORM BLOCK) 3V SUPPLY LOW PIN COUNT FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| M48Z512A M48Z512A-70CS1 M48Z512A-70CS9 M48Z512A-70 |
CAP,TANT,CHIP,4.7UF,10%,25V
4 Mbit 512Kb x8 ZEROPOWER SRAM 4兆位的SRAM 512KB的x8 ZEROPOWER
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M29W800B M29W800B100M1R M29W800B100M1TR M29W800B10 |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
