| PART |
Description |
Maker |
| LC507 |
High Gain Class A Amplifier
|
Gennum Corporation
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| AMMC-5620 AMMC-5620-W10 AMMC-5620-W50 |
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
AMMC-5620 · 6-20 GHz High Gain Amplifier
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| AD605AR-REEL AD605AR-REEL7 AD605BR-REEL AD605BR-RE |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems
|
Analog Devices
|
| TDA8920 TDA8920J TDA8920TH |
2x50 W class-D power amplifier(2x50W D绫诲???????澶у?)
2 x 50 W class-D power amplifier 80 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO24
2 x 50 W class-D power amplifier
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| AM-AMC-140 AMC-140SMA AM-140PIN |
Circular Connector; No. of Contacts:37; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
High Performance Amplifier/ 29 dB Gain/ 10 - 200 MHz
High Performance Amplifier, 29 dB Gain, 10 - 200 MHz
|
Tyco Electronics
|
| RF3330 RF3330PCBA |
IF GAIN CONTROLLED AMPLIFIER 中频增益控制放大
IF GAIN CONTROLLED AMPLIFIER RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| 2301 |
2.3 GHz Class C, Common Base; fO (MHz): 0; P(out) (W): 1.5; P(in) (W): 0.24; Gain (dB): 8.5; Vcc (V): 20; Cob (pF): 4; Case Style: 55BT-1 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHZTECH[GHz Technology]
GHz Technology, Inc.
|
| L2SC3837QLT3G |
High-Frequency Amplifier Transistor Small rbb Cc and high gain.
|
Leshan Radio Company
|
| CGY121A Q-62702-G66 CGY121 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
