| PART |
Description |
Maker |
| KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16）的CMOS掩模ROM2兆位Mx8 / 2Mx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UPD4632312F9-BE95X-BT3 UPD4632312F9-CE10X-BT3 UPD4 |
Integrated H-bridge with sleep mode
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|77PIN|PLASTIC 伪静态内存| 2MX16 |的CMOS | BGA封装| 77PIN |塑料
|
Amphenol, Corp.
|
| EMC326SP16AJV-90L EMC326SP16AJV-90LF EMC326SP16AJV |
2Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
|
| K3N6VU1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| A82DL3234TG-70 A82DL32X4T A82DL3224 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
|
AMICC[AMIC Technology]
|
| STK22C48-P45 STK22C48-P45I STK22C48-N20 STK22C48-N |
DIODE TVS 170V 400W UNI 5% SMA
DIODE TVS 17V 400W BIDIR 5% SMA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA RoHS Compliant: Yes
DIODE TVS 100V 400W UNI 5% SMA
DIODE TVS 10V 400W UNI 5% SMA
DIODE TVS 30V 400W BIDIR 5% SMA
NVRAM (EEPROM Based)
DIODE TVS 120V 400W BIDIR 5% SMA
DIODE TVS 300V 400W UNI 5% SMA
DIODE TVS 36V 400W UNI 5% SMA
DIODE TVS 130V 400W UNI 5% SMA
DIODE TVS 180V 400W UNI 5% SMA
DIODE TVS 18V 400W BIDIR 5% SMA
DIODE TVS 200V 400W UNI 5% SMA
DIODE TVS 150V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 20V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 400V 400W UNI 5% SMA NVRAM中（EEPROM的基础
|
ZETTLER electronics GmbH
Electronic Theatre Controls, Inc.
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
