| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M563233G K4M563233G-FN_G60 K4M563233G-FL_F60 K4M |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
| K4S563233F K4S563233FHN K4S563233FHN75 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-10 |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
|
Samsung semiconductor
|
| KM432S2030C KM432S2030CT-F10 KM432S2030CT-F6 KM432 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S28323LF K4S28323LF-ER1H K4S28323LF-F K4S28323LF |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S283233F K4S283233F-C K4S283233F-F1H K4S283233F- |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4G323222A-QC/L45 K4G323222A-QC/L50 K4G323222A-QC/ |
512K x 32Bit x 2 Banks Synchronous Graphic RAM Data Sheet
32Mbit SGRAM 32兆SGRAM
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5V22F-55 HY57V283220T-6 HY57V283220T-55 HY57V283 |
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D2632 |
DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
