| PART |
Description |
Maker |
| M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681
Triple 3-input NAND Gate 3输入与非
Quad 2-input NAND Gate 输入与非
Single 8-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate 输入与非
Dual 4-input NAND Gate 4输入与非
|
ITT, Corp.
Astrodyne, Inc.
Ecliptek, Corp.
Electronic Theatre Controls, Inc.
Bourns, Inc.
Newhaven Display International, Inc.
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| CD4019BC CD4019BCM CD4019BCN CD4019BCSJ CD4019BCMX |
Quad AND-OR Select Gate
Quad 2-input OR Gate 4000/14000/40000 SERIES, QUAD 2-INPUT AND-OR GATE, PDSO16
Single 2-Input NAND Gate with Schmitt-Trigger Input 5-SC70 -40 to 85 4000/14000/40000 SERIES, QUAD 2-INPUT AND-OR GATE, PDIP16
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14
HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V.
Philips
|
| KK4011B |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| IN74HCT20N IN74HCT20 IN74HCT20D |
DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS
|
INTEGRAL Semiconductor Devices
INTEGRAL[Integral Corp.]
|
| MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| KK74AC00 |
Quad 2-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK74ACT10 KK74ACT10N KK74ACT10D |
Triple 3-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| AP2302AGN-HF AP2302AGN-HF-14 |
Capable of 2.5V gate drive, Lower Gate Charge
Surface mount package
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
