| PART |
Description |
Maker |
| KM23C8100D KM23C8100DG |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX23C8111PC-95 MX23C8111PC-12 |
ROM|512KX16/1MX8|CMOS|DIP|42PIN|PLASTIC 光盘| 512KX16/1MX8 |的CMOS |双酯| 42PIN |塑料
|
Macronix International Co., Ltd.
|
| 29F800 MX29F800TMC-12 MX29F800BMC-90 MX29F800BTC-9 |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY 512K X 16 FLASH 5V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd.
http://
|
| UPD29F800ALGZ-C15B-MJH UPD29F800ALGZ-C15T-MJH UPD2 |
XWAY™ TANTOS
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information | Information[10/2002]
EEPROM|FLASH|512KX16/1MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | TSSOP封装| 48PIN |塑料
|
NEC, Corp.
3M Company
|
| KM23V8105D KM23V8105DG KM23V8105G |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M29F800AT55M1 |
EEPROM,FLASH,512KX16/1MX8,CMOS,SOP,44PIN,PLASTIC
From old datasheet system
|
ST Microelectronics
|
| K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet
512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EDI8F81027C |
1Mx8 CMOS SRAM Monolithic(1Mx8 CMOS单片静态RAM)
|
White Electronic Designs Corporation
|
| AC23V8000 |
1MX8 BIT CMOS MASK ROM
|
Artchips
|
| MX26LV800ABXBC-55G MX26LV800ABXBC-70G MX26LV800ATX |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
| EDI8F81024C EDI8F81024C100BSC EDI8F81024C70BSC EDI |
1Mx8 Static RAM CMOS, Module
|
White Electronic Designs Corporation
|
