PART |
Description |
Maker |
HM624256AJP-25 |
262144-word x 4-bit High Speed CMOS Static RAM
|
Renesas Technology / Hitachi Semiconductor
|
HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词?8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储 524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd. Hitachi Semiconductor
|
HM624256ASERIES 624256A HM624256AJP-25 |
262144-word x 4-bit High Speed CMOS Static RAM From old datasheet system
|
Hitachi Semiconductor
|
CXK77920YM CXK77920TM CXK77920TM_YM |
262144-word x 9-bit High Speed Synchronous Static RAM From old datasheet system
|
Sony
|
M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
CXK582000M CXK582000M-10LL CXK582000M-85LL CXK5820 |
128 x 64 pixel format, LED Backlight available 262144-word X 8-bit High Speed CMOS Static RAM From old datasheet system
|
SONY[Sony Corporation]
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
M5M44260CJ M5M44260CJ-5 M5M44260CJ-5S M5M44260CJ-6 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5V416CWG-55HI02 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
http:// Renesas Electronics Corporation
|
M5M4V4265CJ-5 M5M4V4265CJ-5S M5M4V4265CJ-6 M5M4V42 |
EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MCM67B518 MCM67B518FN10 MCM67B518FN12 MCM67B518FN9 |
32K x 18 Bit BurstRAM Synchronous Fast Static RAM 32K X 18 CACHE SRAM, PQCC52
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|