PART |
Description |
Maker |
KDR367 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR367E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR331 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
5GWJZ47 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATION
|
TOSHIBA
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
1GWJ43 |
SCHOTTKY BARRIER (HIGH SPEED RECTIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
HSB226WK |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
HSU227 |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
HSB0104YP |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|