| PART |
Description |
Maker |
| HBR10100SS HBR10100SB HBR10100SHF HBR10100SZ HBR10 |
High frequency switch power supply
|
JILIN SINO-MICROELECTRO...
|
| 3DG9014 |
High frequency switching power supply
|
JILIN SINO-MICROELECTRO...
|
| G402SD |
The G402SD is high frequency rectification for switching power supply
|
E-Tech Electronics LTD
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| ACE358 |
The ACE358 consists of two independent high gain, internally frequency compensated operational amplifier. It can be operated from a Single power supply and also split power supplies.
|
ACE Technology Co., LTD.
|
| A4405 |
The A4405 is an automotive power management IC that uses a high frequency constant on-time 5.45 V pre-regulator to supply two internal 5 V linear regulators and a 3.3 V linear DMOS driver.
|
Allegro MicroSystems
|
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
| G401SD |
SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.2A
The G401SD is high frequency rectification for switching power supply
|
GTM CORPORATION
E-Tech Electronics LTD
|
| CPH3004 |
Ultrahigh-Frequency Transistors
High-Frequency Medium-Power Amplifier Applications
|
SANYO[Sanyo Semicon Device]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 2SD748A 2SD748 |
From old datasheet system
LOW FREQUENCY POWER AMPLIFIER REGULATOR FOR TV POWER SUPPLY
|
Unknow
ETC
List of Unclassifed Manufacturers
|
| SC411MLTRT SC411EVB SC411 |
Synchronous Buck Pseudo-Fixed Frequency Power Supply Controller
|
Semtech Corporation
|
