| PART |
Description |
Maker |
| LTC6085HGNTR LTC6084HDDPBF |
Quad 1.5MHz, Rail-to-Rail, CMOS Ampli?ers
Dual 1.5MHz, Rail-to-Rail, CMOS Ampli?ers
|
Linear Technology
|
| 310-025109-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024107-021 024107-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025103-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025107-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| LT6604CUFF-5PBF |
Dual Very Low Noise, Differential Ampli?er and 5MHz Lowpass Filter
|
Linear Technology
|
| SL2524C SL2524LC SL2524 SL2524NA SL25241C SL2524B |
7V; 1.3GHz dual wideband logarithmic amplifier. For ultra wideband log receivers, channelised receivers, monopulse applications
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| 2N527 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conduct...
|
| BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG |
NPN 8 GHz wideband transistors
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| 0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers
MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In...
FREESCALE[Freescale Semiconductor, Inc]
Motorola
|
| BFG541 |
NPN 9 GHz wideband transistor
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors
Philips Semiconductors
|
