| PART |
Description |
Maker |
| M63832GP M63832KP |
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric Semiconductor
|
| M63836KP |
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Sem...
|
| M63820FP M63820KP |
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M63827DP M63827WP |
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54585 M54585FP M54585P |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M54562 M54562FP M54562P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M63826FP M63826GP M63826P M63826P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 6A条一（c）| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
| LB1274 |
6-Unit / Darlington Transistor Array
|
Sanyo
|
| IR2410 |
7-Unit 400mA Darlington Transistor Array
|
Sharp
|
