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SLA4340 - PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 4 A, 60 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR PNP NPN Darlington H-bridge

SLA4340_137157.PDF Datasheet

Part No.

SLA4340

Description

PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 4 A, 60 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
PNP NPN Darlington H-bridge

File Size

29.33K / 2 Page

Maker

Sanken Electric Co., Ltd.
SANKEN[Sanken electric]

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: SLA4310

Maker: SK

Pack: ZIP

Stock: Reserved

Unit price for :

50: $19.38

100: $18.42

1000: $17.45

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Full text search : PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 4 A, 60 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR PNP NPN Darlington H-bridge

Product Description search : PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 4 A, 60 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR PNP NPN Darlington H-bridge

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D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 40V V(BR)CEO \| 500MA I(C) \| TO-202AC TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 50V V(BR)CEO \| 6A I(C) \| TO-220AB TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 70V V(BR)CEO \| 6A I(C) \| TO-220AB TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 90V V(BR)CEO \| 6A I(C) \| TO-220AB TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| TO-202 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 2A I(C) \| TO-202AC TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-220AB 晶体管\|晶体管\|达林顿\|叩\| 80V的五（巴西）总裁\| 6A条一（c）\| TO - 220AB现有	Vishay Intertechnology, Inc.
MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| CHIP 晶体管\|晶体管\|进步党\| 150伏五（巴西）总裁\|芯片 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| CHIP 晶体管\|晶体管\|达林顿\|叩\| 60V的五（巴西）总裁\|芯片 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| CHIP 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|芯片 TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| CHIP TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 30V V(BR)CEO \| CHIP TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| CHIP TRANSISTOR\|BJT\|DARLINGTON\|NPN\|CHIP TRANSISTOR\|BJT\|DARLINGTON\|NPN\|30VV(BR)CEO\|CHIP	Zetex Semiconductor PLC Central Semiconductor, Corp. Cypress Semiconductor, Corp.
2N999 ST640 ST646 FT359	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 500MA I(C) \| CAN TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 10A I(C) \| TO-3 TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 10A I(C) \| TO-3 晶体管\|晶体管\|达林顿\|进步党\| 80V的五（巴西）总裁\| 10A条一（c）\|3 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 350V V(BR)CEO \| 15A I(C) \| TO-3	STMicroelectronics N.V.
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MPSW4506 MPSH10RLRA MPSH17RLRAG MPSH17RLRA MPSW45G	One Watt Darlington Transistors NPN Silicon VHF/UHF Transistors NPN Silicon CATV Transistor One Watt Darlington Transistor NPN Silicon Amplifier Transistor PNP Silicon	ONSEMI[ON Semiconductor]
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ZTX712	PNP Darlington Transistor PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR	Zetex Semiconductors
ECG191 ECG189 ECG172A ECG179 ECG193 ECG184	Fan Screen kits; Material: Stainless steel wire mesh; Adaptation Machine: For both AC SAN ACE and AC New SAN ACE (except for models with an alarm TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 2A I(C) \| TO-202VAR TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 40V V(BR)CEO \| 300MA I(C) \| TO-92 晶体管\|晶体管\|达林顿\|叩\| 40V的五（巴西）总裁\| 300mA的一（c）\|2 TRANSISTOR \| BJT \| PNP \| 90V V(BR)CEO \| 25A I(C) \| TO-3 晶体管\|晶体管\|进步党\| 90V的五（巴西）总裁\|5A一（c）\| TRANSISTOR \| BJT \| PNP \| 70V V(BR)CEO \| 1A I(C) \| TO-92VAR 晶体管\|晶体管\|进步党\| 70V的五（巴西）总裁\| 1A条一（c）\|2VAR TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 4A I(C) \| TO-126	DB Lectro, Inc. SIEMENS AG
2SC1881K	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB Silicon NPN Darlington Transistor	Hitachi Semiconductor
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB	FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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