PART |
Description |
Maker |
MMFT2N02EL MMFT2N02EL_D ON2221 |
From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTD20N03HDL_D ON2480 |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS From old datasheet system
|
ON Semi
|
MTB50P03HDL MTB50P03HDL_D ON2435 ON2434 |
TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS From old datasheet system
|
MOTOROLA[Motorola Inc] ON Semi MOTOROLA[Motorola, Inc]
|
MTD20N06HDL_D ON2582 |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS From old datasheet system
|
ON Semi
|
MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
PHU78NQ03LT PHP78NQ03LT |
N-channel TrenchMOS logic level FET N-channel TrenchMOSTM logic level FET 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
BUK9506-55A BUK9E06-55A BUK9506_9606_9E06_55A-03 B |
TrenchMOSlogic level FET TrenchMOS?logic level FET TrenchMOS TM logic level FET TrenchMOS (tm) logic level FET From old datasheet system TrenchMOS logic level FET
|
Philips NXP Semiconductors
|
BUK9523-75A BUK9523_9623_75A-01 BUK9623-75A |
TrenchMOS(tm) logic level FET TrenchMOS⑩ logic level FET From old datasheet system TrenchMOS TM logic level FET TrenchMOS logic level FET
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
|
ON Semiconductor Motorola, Inc
|