| PART |
Description |
Maker |
| BBY51 Q62702-B631 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY57 BBY57-02L BBY57-02V BBY57-05W BBY57-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
| BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BBY55-03W BBY5503W Q62702-B0911 |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
Siemens Group
|
| BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| KDV149 KDV149B KDV149C KDV149D |
Silicon diode for AM radio band tuning applications
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(AM RADIO BAND TUNING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D |
Silicon Tuning Diode
Silicon Tuning Diode 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
| MMVL3102T1 MMVL3102T1_06 MMVL3102T1G MMVL3102T106 |
Silicon Tuning Diode
VHF BAND, 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
|
ONSEMI[ON Semiconductor]
|
| KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|
