| PART |
Description |
Maker |
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10053 |
12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10135 |
5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10048 |
30 Watts, 2.1.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor
30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10149 |
70 Watts, 92160 MHz GOLDMOS Field Effect Transistor
70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10193 |
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTB20176 |
5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦，1.78-1.92 GHz射频功率晶体
5 Watts, 1.78?.92 GHz RF Power Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PH1113-100 |
Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty 雷达脉冲功率晶体 100瓦，11日至1月三日千兆赫，为3ms脉冲0％的关税
|
MACOM[Tyco Electronics]
|
| 2F-10 |
up to 3 GHz 2 Watts
|
Inmet Corporation
|
| PE6824 |
90 Watts WR-90 RF Load Up To 12.4 GHz
|
Pasternack Enterprises, Inc.
|
