PART |
Description |
Maker |
PTF10136 |
6 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10111 |
6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10119 |
12 Watts, 2.1.2 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10065 |
30 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.93.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10122 |
50 Watts WCDMA, 2.1.2 GHz GOLDMOS Field Effect Transistor 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor 50 Watts WCDMA 2.1-2.2 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PE6818 |
40 Watts Medium Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
PE6200 |
75 Watts High Power WR-28 RF Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫,200レ拧脉冲10职务
|
MA-Com MACOM[Tyco Electronics] Analog Devices, Inc.
|
PTB20176 |
5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦,1.78-1.92 GHz射频功率晶体 5 Watts, 1.78?.92 GHz RF Power Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PH1214-25M |
Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150mS Pulse, 10% Duty 雷达脉冲功率晶体 25瓦特.20-1.40千兆赫,150毫秒脉冲0%的
|
Vishay Intertechnology, Inc. MACOM[Tyco Electronics]
|
PH1214-110M |
Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 110瓦特,1.20 - 1 .40千兆赫,150毫秒脉冲10%的
|
Vishay Intertechnology, Inc. MACOM[Tyco Electronics]
|