PART |
Description |
Maker |
TC55VD836FF-150 TC55VD836FF-133 TC55VD836FF-143 |
256K Word x 36 Bit Synchronous No-turnround Static RAM(256K 字x36位同步无转向静RAM) 256K字36位同步无具体时间的静态RAM56K字x36位同步无转向静态内存)
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Toshiba Corporation Toshiba, Corp.
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MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100 Replaced by PTH12000W :
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MOTOROLA INC NEC, Corp. Motorola Mobility Holdings, Inc. Motorola, Inc.
|
GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
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AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PF |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz 256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz
|
Alliance Semiconductor, Corp.
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MCM63F919TQ7R MCM63F919ZP8.5 MCM63F919ZP8.5R MCM63 |
256K x 36 and 512K x 18 Bit Flow??hrough BurstRAM Synchronous Fast Static RAM 256K x 36 and 512K x 18 Bit Flow?Through BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc
|
IDT71V3559S85BG IDT71V3559S75BG IDT71V3559S75BG8 I |
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs
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IDT Integrated Device Technology
|
HM62G36256BP-5 HM62G36256 HM62G36256BP-4 |
8M Synchronous Fast Static RAM(256k-word x 36-bit)
|
HITACHI[Hitachi Semiconductor]
|
MCM69F819TQ11 MCM69F819TQ11R MCM69F819TQ8.5 MCM69F |
256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
KM4132G512 |
256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32x 2组同步图RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
GS88136AD-150 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IDT71V3576YS133BG IDT71V3576YS133BGI IDT71V3578YS1 |
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PBGA165
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Integrated Device Technology, Inc. http:// Integrated Device Techn...
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