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IRFD110 - Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.54ohm,身份证\u003d 1.0安培 Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A) 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package

IRFD110_121979.PDF Datasheet

 
Part No. IRFD110
Description Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.54ohm,身份证\u003d 1.0安培
Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A)
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package

File Size 173.93K  /  6 Page  

Maker


International Rectifier, Corp.
IRF[International Rectifier]



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Part: IRFD110
Maker: IR
Pack: DIP-4
Stock: 6315
Unit price for :
    50: $0.66
  100: $0.63
1000: $0.60

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 Full text search : Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.54ohm,身份证\u003d 1.0安培 Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A) 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
 Product Description search : Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.54ohm,身份证\u003d 1.0安培 Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A) 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package


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