PART |
Description |
Maker |
APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 11A 0.880 Ohm
|
Advanced Power Technology Ltd.
|
APT10050B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 21A 0.500 Ohm
|
Advanced Power Technology
|
APT1001RSVR APT1001RSVRG |
100% Avalanche Tested Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation ADPOW[Advanced Power Technology]
|
APT10025JVFR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT10030L2VFR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
APT10050JVFR |
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
APT10026JN |
POWER MOS IV 1000V 33A 0.26 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
APT10021JLL |
LJT 56C 48#20 8#12 SKT WALL RE POWER MOS 7 1000V 37A 0.210 Ohm
|
Advanced Power Technology Ltd.
|