| PART |
Description |
Maker |
| NNCD68PH NNCD6.8PH NNCD6.8PH-T2 NNCD6.8PH-T1 |
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD 低电容式静电放电二极管噪声裁剪季刊类型：共阳引脚超小微型模具
ESD noise clipping diode 5pin SC-88A
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NNCD68PL NNCD6.8PL |
5-PIN SUPER SMALL MINI MOLD FLAT LEAD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUAD TYPE: COMMON ANODE 5针超小微型模具扁平引线式静电放电二极管噪声裁剪四型：共阳
ESD noise clipping diode 5pin XSOF(flat-lead type)
|
NEC, Corp.
NEC[NEC]
|
| HBAT-5400 HBAT-5400-BLK HBAT-5402 HBAT-5402-BLK HB |
High Performance Schottky Diode for Transient Suppression
HBAT-5402 · Clipping/clamping diode
HBAT-5400 · Clipping/clamping diode
HBAT-540C · Clipping/clamping diode
HBAT-540B · Clipping/clamping diode
|
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| NNCD68H NNCD5.6H NNCD6.8H |
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE
|
NEC Corp.
NEC[NEC]
|
| NNCD5.6LH NNCD6.2LH NNCD6.8LH |
2 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD 低电容式静电放电噪声裁剪二极管季刊类型：共阳引脚超小微型模具
|
NEC, Corp.
NEC Corp.
|
| NNCD8.2B NNCD9.1B NNCD10B NNCD11B NNCD12B NNCD3.3B |
静电放电噪声裁剪二极00毫瓦
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 MW TYPE
|
NEC[NEC]
NEC Corp.
|
| YG838C03R |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.0 to 4.4; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
SCHOTTKY BARRIER DIODE
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| CPDQR5V0C-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| TA6038FNG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.8 to 3.2; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Toshiba Corporation
|
| SSM6P25TU |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
High Speed Switching Applications
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSM6P16FE |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
High Speed Switching Applications
|
Toshiba Corporation
Toshiba Semiconductor
|
