| PART |
Description |
Maker |
| VB526SP-E VB526SPTR-E |
High voltage ignition coil driver power integrated circuit
|
ST Microelectronics
|
| VB526SP-E |
High voltage ignition coil driver power integrated circuit
|
STMicroelectronics
|
| KGF40N60KDA |
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
|
KEC(Korea Electronics)
|
| ISL9V2040S3ST ISL9V2040D3S04 ISL9V2040D3ST ISL9V20 |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGTP14N40F3VL HGT1S14N40F3VLS |
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
330mJ, 400V, N-Channel Ignition IGBT
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 38 A, 420 V, N-CHANNEL IGBT, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| BYX134GP |
High-voltage car ignition diodes
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| TT690MOV |
High Energy Thermally Protected TTxxxMOV
High Energy Thermally Protected TTxxxMOV VOLTAGE-150 to 690 Volts AC Integrated Transient Surge Protector
|
MDE Semiconductor, Inc.
|
| VB921 VB921ZVFI VB921ZVSP |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
|
STMicroelectronics
|
