| PART |
Description |
Maker |
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM（工业温度）)
|
Micron Technology, Inc.
|
| HY57V561620CLT-6 HY57V561620CLT-8 HY57V561620CLT-K |
4 BANKS X 4M X 16BIT SYNCHRONOUS DRAM
|
Hynix Semiconductor
|
| KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM41 |
2M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M641633K |
1M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| TTS3816B4E-7 TTS3816B4E TTS3816B4E-6 TTS3816B4E-6A |
2M x 16Bit x 4 Banks synchronous DRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S164 |
DYNAMIC RAM
1M x 16Bit x 4 Banks (64-MBIT) SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IC42S16400A-7BIG IC42S16400A-6BG IC42S16400A-6BIG |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM 100万16 × 4银行4兆位）内
|
Elpida Memory, Inc.
Integrated Circuit Solu...
|
| K4S511533F K4S511533F-YC K4S511533F-F1H K4S511533F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V56162 HY57V561620CT HY57V561620CT-H |
4 Banks x 4M x 16Bit Synchronous DRAM
16Mx16|3.3V|8K|6/K/H/8/P/S|SDRSDRAM-256M
|
HYNIX
|
| K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D2616 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 200万16 × 4，银行双数据速率同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4D64163HF K4D64163HF-TC60 K4D64163HF-TC33 K4D6416 |
From old datasheet system
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
