PART |
Description |
Maker |
K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc.
|
HY5DS573222F-28 HY5DS573222FP-28 HY5DS573222FP-36 |
GDDR SDRAM - 256Mb 256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb 512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
|
HY5DV281622DT HY5DV281622DT-33 HY5DV281622DT-36 HY |
128M(8Mx16) GDDR SDRAM GDDR SDRAM - 128Mb
|
Hynix Semiconductor
|
K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 CABLE ASSEMBLY; 2.9mm MALE TO 2.9mm MALE; 40 GHz CABLE 56Mbit GDDR SDRAM内存
|
Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
K4D263238I-UC |
128M GDDR SDRAM
|
Samsung
|
HY5DU283222F-36 HY5DU283222F-28 HY5DU283222F-26 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
HY5DU281622ET-30 HY5DU281622ET-25 HY5DU281622ET-5 |
128M(8Mx16) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
W9412G2IB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|