| PART |
Description |
Maker |
| MWS51141 MWS5114E3 MWS5114 MWS5114D1 MWS5114D2 MWS |
1024-Word x 4-Bit LSI Static RAM
|
INTERSIL[Intersil Corporation]
|
| CDP1823C CDP1823CD3 CDP1823C_3 |
High-Reliability CMOS 128-Word x 8-Bit Static RAM
|
INTERSIL[Intersil Corporation]
|
| CXK5B18120TM- CXK5B18120TM-12 CXK5B18120TM |
128 x 64 pixel format, LED Backlight available
-65536-word x 18-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
| CXK591000YM-55LL CXK591000TM CXK591000TM-10LL CXK5 |
131/072-word X 9-bit High Speed CMOS Static RAM
131,072-word X 9-bit High Speed CMOS Static RAM 131,072字9位高速CMOS静态RAM
128 x 64 pixel format, LED Backlight available 131,072字9位高速CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC55 |
131,072 WORD x 8 BIT STATIC RAM 131072字8位静态RAM
131072 WORD x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55W800FT |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
|
| MWS5101 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AE |
256-Word x 4-Bit LSI Static RAM(1K大规模集成电路静态RAM) 256字4位LSI的静态RAM（每1000大规模集成电路静态内存）
LJT 6C 6#20 SKT WALL RECP
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:11-35 RoHS Compliant: No
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
