| PART |
Description |
Maker |
| AK5321024 |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory 262,144 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| HN27C4096HG-85 HN27C4096HCC HN27C4096HCC-85 HN27C4 |
262,144-word x 16-bit CMOS UV Erasable and Programmable ROM 262,144字16位CMOS紫外线可擦除只读存储
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| GM71C4256 |
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
LG Semicon Co.,Ltd.
|
| TC55VZM216AJJI-08 TC55VZM216AFTI-08 TC55VZM216AFTI |
262,144-WORD BY 16-BIT CMOS STATIC RAM
|
TOSHIBA
|
| 24C256 IS24C256 IS24C256-2G IS24C256-2GI IS24C256- |
262,144-bit 2-WIRE SERIAL CMOS EEPROM
262,144-bit 2-WIRE SERIAL CMOS EEPROM 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
DIODE ZENER 6.2V 120MW SSSMINI2
262/144-bit2-WIRESERIALCMOSEEPROM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
ETC
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| AK5361024W AK5362048W |
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CO...
|
| TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L |
262,144-WORD BY 16-BIT STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| HM514260DLJI-7 HM514260DLJI-8 |
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| A23W8308 A23W8308L A23W8308H A23W8308M |
262,144 X 8 BIT CMOS MASK ROM
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM
|
AMIC Technology
|
| NM27C256NE100 |
262,144-Bit (32K x 8) High Performance CMOS EPROM 262,144位（32K的8）高性能CMOS存储
|
Fairchild Semiconductor, Corp.
|
