| PART |
Description |
Maker |
| TPC8006-H |
Field Effect Transistor Silicon N Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Portable Equipment Applications Notebook PC Applications
|
TOSHIBA
|
| TPC8009-H |
Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
|
Toshiba Semiconductor
Toshiba Corporation
|
| TPC8013-H |
Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
|
| SFT2222A-18 SFT2222A-46 |
NPN High Speed Transistor
800 mA 75 Volts NPN High Speed Transistor
|
Solid States Devices, Inc
Solid States Devices, I...
|
| BUL42D BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| KTC4527F |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| 2SA1010 2SA1010-15 |
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
