| PART |
Description |
Maker |
| M4-192/96-12VI M4LV-256/128-12AC M4LV-128N/64-10JI |
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 12 ns, PQFP144
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 12 ns, PBGA256
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQCC84
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 18 ns, PQFP144
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 12 ns, PQFP100
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP48
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 15 ns, PQCC84
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 15 ns, PQCC44
EE PLD, 14 ns, PQCC44 PLASTIC, LCC-44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP100
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 12 ns, PQFP44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 15 ns, PQFP48
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 15 ns, PQFP44
EE PLD, 14 ns, PBGA256 BGA-256
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PBGA256
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 18 ns, PQFP100
|
Lattice Semiconductor, Corp.
|
| ISPLSI2192VE100LB144 ISPLSI2192VE100LB144I ISPLSI2 |
3.3V In-System Programmable SuperFAST?High Density PLD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST垄芒 High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
EE PLD, 13 ns, PQFP128
|
LATTICE SEMICONDUCTOR CORP
|
| ISPLSI2192VL-100LB144 ISPLSI2192VL-100LT128 ISPLSI |
2.5V In-System Programmable SuperFAST High Density PLD
TRIAC STANDARD 12A 400V TO-220AB
2.5V In-System Programmable SuperFASTHigh Density PLD
|
Lattice Semiconductor Corporation
|
| ISPLSI2032A-80LJ ISPLSIB2032 ISPLSIB2032-110LJ ISP |
(ISPLSI2032/A) In-System Programmable SuperFAST High Density PLD
In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| ISPLSI8600V-125LB272 ISPLSI8600V-125LB492 ISPLSI86 |
3.3V In-System Programmable SuperBIG High Density PLD
3.3V In-System Programmable SuperBIG⑩ High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| 1032-60LG_883 1032-60LJ 1032-60LJI 1032-60LT 1032- |
High-Density Programmable Logic
In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| 8840 ISPLSI8840-60LB432 ISPLSI8840-110LB432 ISPLSI |
In-System Programmable SuperBIG?High Density PLD
In-System Programmable SuperBIGHigh Density PLD EE PLD, 24 ns, PBGA432
In-System Programmable SuperBIG High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| 81080V ISPLSI81080V-60LB272 ISPLSI81080V-90LB492 I |
3.3V In-System Programmable SuperBIG High Density PLD
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 14.5 ns, PBGA492
3.3V In-System Programmable SuperBIGHigh Density PLD 3.3在系统可编程SuperBIG⑩高密度可编程逻辑器件
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| UPSD3212A-40T6 UPSD3212A-40T6T UPSD3212A-40U6 UPSD |
Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic
Flash Programmable System Device with 8032 MCU with USB and Programmable Logic
Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM
|
ST Microelectronics
|
