| PART |
Description |
Maker |
| W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28
64K X 8 OTPROM, 90 ns, PDIP28
64K X 8 UVPROM, 55 ns, CDIP28
64K X 8 UVPROM, 90 ns, CDIP28
64K X 8 UVPROM, 70 ns, CDIP28
IC 集成电路
512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
Rochester Electronics, LLC
AMD
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| TC642BEPA713 TC647BEPA713 TC642BEPATR TC647BEOA713 |
PWM Fan Speed Controllers With Minimum Fan Speed, Fan Restart and FanSense Technology for Fault Detection
|
Microchip Technology
|
| CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压（3.3V 64K的18同步高速缓冲存储器的RAM
From old datasheet system
64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| CY7C1021CV33-10ZXIT CY7C1021CV33-12VIT |
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY62126V CY62126VLL-55BAC CY62126VLL-70BAI CY62126 |
64K X 16 STANDARD SRAM, 70 ns, PDSO44
64K X 16 STANDARD SRAM, 55 ns, PDSO44
64K X 16 STANDARD SRAM, 70 ns, PBGA48
64K X 16 STANDARD SRAM, 55 ns, PBGA48
From old datasheet system
64K x 16 Static RAM
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1021CV26-15ZE |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| W29N102C |
64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V电源供电的CMOS闪速存储器)
|
Winbond Electronics Corp
|
| CY7C09089 |
64K x 8 Synchronous Dual-Port Static RAM(64K x 8 同步双端口静态RAM)
|
Cypress Semiconductor Corp.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
