| PART |
Description |
Maker |
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MTP10N25 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MW6S010GMR1 MW6S010GNR1 MW6S010MR1 MW6S010 MW6S010 |
RF Power Field Effect Transistor
|
飞思卡尔半导体(中国)有限公司
FREESCALE[Freescale Semiconductor, Inc]
Freescale (Motorola)
|
| MRF6P24190HR6 MRF6P24190HR608 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF8S7235NR3 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF1517NT1 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MTP10N35 MTP10N40 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
| UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MTM25N10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
