PART |
Description |
Maker |
K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Surface Mount Resistors Thick Film Chip Resistors 256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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MX26LV400TXEC-70G MX26LV400 MX26LV400BTC-55 MX26LV |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
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MCNIX[Macronix International]
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IS61LV25616 IS61LV25616_01 IS61LV25616-10B IS61LV2 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY IC,SRAM,256KX16,CMOS,SOJ,44PIN,PLASTIC
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Integrated Silicon Solu... ISSI[Integrated Silicon Solution, Inc]
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KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM
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ICSI[Integrated Circuit Solution Inc]
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K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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IC62C1024 IC62C1024-35TI IC62C1024-35W IC62C1024-3 |
128K X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 HIGH SPEED CMOS STATIC RAM 128K的乘八高速CMOS静态RAM From old datasheet system ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM 55ns; 5V; 128K x 8 high-speed CMOS static RAM
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Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
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HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM 120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
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HITACHI[Hitachi Semiconductor]
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CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM 131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
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SONY Vishay Intertechnology, Inc.
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CXK582000TM/YM/M-10LL CXK582000TM/YM/M-85LL |
262144-word x 8-bit High Speed CMOS Static RAM 262144字8位高速CMOS静态RAM 262144-word x 8-bit High Speed CMOS Static RAM
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Vishay Intertechnology, Inc. SONY
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KM684000L KM684000LG KM684000LG-L KM684000LP KM684 |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM 512Kx8位高高速CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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