| PART |
Description |
Maker |
| K6R4016V1C |
256Kx16 Bit High Speed Static RAM
|
Samsung semiconductor
|
| K6R4016V1D K6R4016V1D-TC10 |
Description = K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating)
|
SAMSUNG
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT7133LA IDT7133SA IDT7143LA IDT7143SA IDT7133LA5 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
2K x 16 Dual-Port RAM
HIGH SPEED 2K X 16 DUAL-PORT SRAM
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CQFP68
30V N-Channel Logic Level PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel 2K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, PQCC68
150V N-Channel UltraFET Trench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 25 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
INDUCT 22.8UH 4.9A 260KHZ KLIPMT 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高2K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
400V N-Channel MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, PQCC68
100V N-Channel Trench MOSFET 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 55 ns, PQCC68
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
| K6T4016V3BK6T4016U3BFAMILY |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| IS62C1024-35Q IS62C1024-35QI IS62C1024 16_62C1024 |
70ns; 5V; 128K x 8 high-speed CMOS static RAM
Micro LED; LED Color:Red Orange; Luminous Intensity:80ucd; Viewing Angle:140 ; Forward Voltage:2.2V; Color:Red/Orange; Package/Case:1210; Reel Quantity:3000; Wavelength:630nm RoHS Compliant: Yes 128K的8高速CMOS静态RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM
|
Advanced Interconnections, Corp.
SIEMENS AG
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
Integrated Circuit Solu...
|
| CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM
131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY
Vishay Intertechnology, Inc.
|
| IC61C1024L IC61C1024 IC61C1024L-12HI IC61C1024L-15 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
GT 12C 12#12 PIN RECP WALL RM 128K的8高速CMOS静态RAM
RES CH 68.1 EW 1%
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Electronic Theatre Controls, Inc.
ICSI
Integrated Circuit Solution Inc
|
