PART |
Description |
Maker |
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
AT41485 AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41486 AT-41486-BLK |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
Q62702-F655 BFQ60 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
AT-41435 AT41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Search -----> AT-41435
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AMMC-6231 |
AMMC-6231 · 16-32 GHz Low Noise Amplifier 16?2 GHz Low Noise Amplifier
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
BAT15-04 BAT15_04 Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) 硅双肖特基二极管(星展混频器应用12 GHz低噪声系数低屏障型) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
UPC2713T UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
|
AA035N1-00 AA035N2-00 |
286 GHz GaAs MMIC Low Noise Amplifier 28-36 GHz GaAs MMIC Low Noise Amplifier GT 12C 6#12 6#12 PIN PLUG
|
http:// Alpha Industries Inc ALPHA[Alpha Industries] Alpha Industries, Inc.
|
Q62702-F1772 BF2000W |
From old datasheet system Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|