| PART |
Description |
Maker |
| PTB20101 |
175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
| MRF373D |
MRF373R1, MRF373SR1 470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
|
Motorola
|
| MRF374D |
MRF374 470-860 MHz, 100 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
|
Motorola
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BGD804 BGD804112 |
860 MHz, 20 dB gain power
|
NXP Semiconductors N.V.
Philips
|
| BGD812 BGD81201 |
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| BGD904MI BGD904 |
860 MHz, 20 dB gain power doubler amplifier
|
Philips
|
| BGD902L BGD902L_3 |
860 MHz, 18.5 dB gain power doubler amplifier
From old datasheet system
|
Philips
|
| PTB20004 |
50 Watts, 860-900 MHz Cellular Radio RF Power Transistor
50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
