PART |
Description |
Maker |
U20C60 U20C30 U20C40 U20C50 |
POWER RECTIFIERS(20A/300-600V) POWER RECTIFIERS(20A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
F16C60 F16C40 F16C30 F16C50 |
POWER RECTIFIERS(16A/300-600V) POWER RECTIFIERS(16A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
APT6030 APT6030BVFR |
POWER MOS V 600V 21A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
U08A40 U08A60 U08A30 U08A50 |
FAST RECTIFIERS(8A/300-600V) FAST RECTIFIERS(8A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
H08A60 H08A30 H08A40 H08A50 |
HIGH EFFICIENCY RECTIFIERS(8A/300-600V) HIGH EFFICIENCY RECTIFIERS(8A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
TC1303B-AA1EUNTR TC1303B-AA0EUN TC1303B-AA2EUN TC1 |
500 mA Synchronous Buck Regulator, 300 mA LDO with Power-Good Output 500毫安同步降压稳压器,300 mA的LDO具有电源就绪输出
|
Yageo, Corp. Microchip Technology, Inc. Microchip Technology Inc.
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
MMBF2202PT1 MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 Power MOSFET 300 mAmps / 20 Volts P−Channel SC/SOT
|
ON Semiconductor
|