| PART |
Description |
Maker |
| 2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE
General Purpose Medium Power Amplifier
|
Continental Device India Limited
|
| TM150SA-6 |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2N6705 |
General Purpose Medium Power Amplifier
|
Continental Device India Limited
|
| TM25EZ-H TM25EZ-M TM25RZ-H TM25RZ-M TM28RZ-M |
MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| TM100SZ-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM100DZ-2H RM100DZ-24 RM100CZ-24 RM100CZ-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM100D2Z-40 |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| TM60SA-6 |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30CZ-H RM30DZ-H RM30DZ-M RM30CZ-M RM30CZ |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RM75TPM-24 RM75TPM-H RM75TPM-M RM75TPM-M09 RM75TPM |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
